Atomic registry has strong impact on controlling the electronic structure and properties of graphene due to localized strain and localized charge distribution. However, the direct experimental evidence of the correlation between the physical structure and chemical reactivity is still lacking.

In 2015, our group reported an experimental observation that the electron transfer chemistry can significantly modify twisted bilayer graphene (tBLG) by investigating the results of chemical functionalization with diazonium salts. The relative reaction rate for diazonium salts grafting on tBLG is much higher than that on AB-stacking graphene. Gerischer−Marcus electron transfer theory analysis, along with electronic structures calculations, indicates that different reactivity mainly results from the distinct variation of Density of States distribution in the gap region. Our research suggested a venue to separate and sort different stacking modes of bilayer graphene for various promising applications in nanoelectronics.

 

 

 

 

 

 

 

 

 

 

 

 

Stacking-Mode-Induced Reactivity Enhancement for Twisted Bilayer Graphene